Band engineering of carbon nanotube field-effect transistors via selected area chemical gating

This letter presents an approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part, or the contacts, of nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage positively, while NH3 shifts it negatively for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices. In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices. © 2005 American Institute of Physics. fDOI: 10.1063/1.1944898g